Why is Infineon developing a 500-W 5G PSU?
thermal resistance between the device and heatsink.This and other techniques, such as greater use of planar magnetics, have enabled Infineon to develop a prototype 500-W 5G PSU that delivers high efficiency in a dense, low-profi
Why do we use a dual-boost topology in a 5G PSU?
o implement each approach and the thermal behavior. For example, in our 500-W 5G PSU design, we have chosen a dual-boost topology using silicon MOSFETs, partly because this approach spreads the thermal losses due to switching across two devices, reducing the amount each h ats up and creating two lower-temperature hotspots.Below in Fig. 4 is
Can silicon MOSFETs replace diodes in a silicon H4 bidirectional switch?
ices are more costly than standard silicon MOSFETs. So, when using silicon MOSFETs to replace the diodes in a silicon H4 bidirectional switch, they need to have very low on-state resistances to minimize losses an o reach efficie cy figures close to those of GaN. (a) (b) Fig. 3.
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